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| WTC2308 N-Channel Enhancement Mode Power MOSFET 1 GATE 3 DRAIN DRAIN CURRENT 3 AMPERES DRAIN SOURCE VOLTAGE 60 VOLTAGE Features: *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <160 m@V GS =10V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package SOURCE 2 3 1 2 SOT-23 ( Maximum Ratings(TA=25 Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 Unless Otherwise Specified) Symbol VDS VGS Value 60 Unit V 20 3.0 2.3 10 1.38 90 -55~+150 W /W A ,(T A ,(T A ID IDM PD R JA Pulsed Drain Current 1,2 Total Power Dissipation(T A =25C) Maximum Thermal Resistance Junction-ambient 3 Operating Junction and Storage Temperature Range TJ, Tstg Device Marking WTC2308=2308 http:www.weitron.com.tw WEITRON 1/6 24-May-05 WTC2308 Electrical Characteristics (TA = 25 Characteristic Unless otherwise noted) Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS =0,ID =250A Gate-Source Threshold Voltage VDS =VGS ,ID =250A Gate-Source Leakage Current VGS = 20V Drain- Source Leakage Current(Tj=25C) VDS =60V,VGS =0 Drain- Source Leakage Current(Tj=70C) VDS =48V,VGS =0 Drain-Source On-Resistance VGS =10V,ID =2A VGS =4.5V,ID =1.7A Forward Transconductance VDS =5 V,ID =3 A gfs RDS(on) 5.0 160 220 m IDSS 25 V(BR)DSS VGS(Th) IGSS 60 1.0 V 3.0 nA 100 10 A S Dynamic Input Capacitance VGS =0V,VDS =25V,f=1.0MHz Output Capacitance VGS =0V,VDS =25V,f=1.0MHz Reverse Transf er Capacitanc e VGS =0V,VDS =25V,f=1.0MHz Ciss Coss Crss 490 55 40 780 pF http:www.weitron.com.tw WEITRON 2/6 24-May-05 WTC2308 Switching Turn-on Delay Time 2 VDS =30V,VGS =10V,ID =1A,R D =30 ,R G =3.3 Rise Time VDS =30V,VGS =10V,ID =1A,R D =30 ,R G =3.3 Turn-off De lay Time VDS =30V,VGS =10V,ID =1A,R D =30 ,R G =3.3 Fall Time VDS =30V,VGS =10V,ID =1A,R D =30 ,R G =3.3 Total Gate Charge 2 VDS =48V,VGS =4.5V,ID =3A Gate-Source Charge VDS =48V,VGS =4.5V,ID =3A Gate-Drain Change VDS =48V,VGS =4.5V,ID =3A td(on) 6 5 16 3 6 1.6 3 ns td (off) 10 nC tr tf Qg Qgs Qgd Source-Drain Diode Characteristics Forward On Voltage VGS =0V,IS=1.2A 2 VSD - 25 26 1.2 - V ns nC Reverse Recovery Time VGS =0V,IS=3A,dl/dt=100A/s Reverse Recovery Charge VGS =0V,IS=3A,dl/dt=100A/s Trr Qrr Note: 1. Pulse width limited by max, junction temperature. 2. pulse width300s, duty cycle2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 270/W when mounted on min, copper pad. WEITRON http://www.weitron.com.tw 3/6 24-May-05 WTC2308 10 10 TA =25 C 8 10V 7.0V 4.5V 5.0V 8 TA =150C 10V 7.0V 5.0V 4.5V ID ,Drain Current(A) ID ,Drain Current(A) 6 VG =3.0V 6 VG =3.0V 4 4 2 2 0 0 0 1 2 3 4 5 0 1 2 3 4 5 FIG.1 Typical Output Characteristics 105 2.0 VDS ,DRAIN-TO-SOURCE VOLTAGE(V) Fig.2 Typical Output Characteristics VDS ,Drain-to-source Voltage(V) 99 I D = 2A TA = 25C Normalized RDs(on) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 V G = 10V I D = 3A RDs(on) (m) 93 87 81 75 2 4 6 8 10 -50 0 50 100 150 Fig.3 On-Resistance v.s. Gate Voltage 4 1.4 VGS ,Gate-to-source Voltage(V) Fig.4 Normalized OnResistance Tj ,Junction Temperature(C) Normalized VGS(th)(V) 1.2 3 1.2 1.0 Is ( A ) 2 Tj = 150C Tj = 25C 0.8 1 0.6 0 0 0.2 0.4 0.6 0.8 1 0.4 -50 0 50 100 150 Fig.5 Forward Characteristics of Reverse Diode VDS ,Source-to-Drain Voltage(V) Fig.6 Gate Threshold Voltage v.s. Junction Temperature Tj ,Junction Temperature(C) WEITRON http://www.weitron.com.tw 4/6 24-May-05 WTC2308 14 1000 f = 1.0MHz VGS , Gate to Source Voltage(V) 12 10 8 6 4 2 0 ID = 3A VDS = 30V VDS = 38V VDS = 48V C(pF) 100 Ciss Coss Crss 0 3 6 9 12 15 10 1 5 9 13 17 21 25 29 Fig 7. Gate Charge Characteristics 100,000 QG , Total Gate Charge(nC) VDS, Drain-to-Source Voltage(V) Fig 8. Typical Capacitance Characteristics 1 Duty factor = 0.5 0.2 0.1 0.1 0.05 10,00 100us 1,000 ID(A) 1ms 0.100 Normalized Thermal Response(R ja ) 10ms 100ms 0.01 0.01 PDM t T 0.010 TA = 25C Single Pulse 0.1 1 10 Is DC Single pulse Duty factor = t / T Peak Tj=PDM x R ja + Ta R ja =270C / W 0.01 0.1 1 10 100 1000 0.001 100 1000 0.001 0.0001 0.001 Fig 9. Maximum Safe Operation Area VDS 90% VDS , Drain-to-Source Voltage(V) Fig 10. Effective Transient Thermal Impedance VG QG QGS QGD t, Pulse Width(s) 4.5V 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Circuit Fig.12 Gate Charge Waveform WEITRON http://www.weitron.com.tw 5/6 24-May-05 WTC2308 SOT-23 Outline Dimension SOT-23 A TOP VIEW D E G H B C K J L M Dim A B C D E G H J K L M Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 WEITRON http://www.weitron.com.tw 6/6 24-May-05 |
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